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HF50-12F
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HF50-12F is a 12.5 V Class C epitaxial silicon NPN transistor designed primarily for land mobile transmitter applications. This device utilizes emitter ballasting, is extremely suitable and capable of withstanding high VSRW under operating conditions.
PACKAGE STYLE .380 4L FLG
B
.112 x 45 A
E
C
O.125 NOM. FULL R J .125
B
E
C D
FEATURES:
* PG = 16 dB min. at 50 W/30 MHz * IMD3 = -30 dBc max. at 50 W(PEP) * OmnigoldTM Metalization System
F
E I GH
MAXIMUM RATINGS
IC VCBO VCEO VEBO PDISS TJ TSTG JC 12.0 A 45 V 18 V 3.5 V 183 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 1.05 C/W
DIM A B C D E F G H I J
MINIMUM
inches / mm
MAXIMUM
inches / mm
.220 / 5.59 .785 / 19.94 .720 / 18.29 .970 / 24.64 .004 / 0.10 .085 / 2.16 .160 / 4.06 .240 / 6.10
.230 / 5.84 .730 / 18.54 .980 / 24.89 .385 / 9.78 .006 / 0.15 .105 / 2.67 .180 / 4.57 .280 / 7.11 .255 / 6.48
ORDER CODE: ASI10596
CHARACTERISTICS
SYMBOL
BVCBO BVCES BVCEO BVEBO ICES hFE IC = 50 mA
TC = 25 C
NONETEST CONDITIONS
IC = 100 mA IC = 50 mA IE = 10 mA VCE = 15 V VCE = 5.0 V IC = 5.0 A
MINIMUM TYPICAL MAXIMUM
45 40 18 3.5 10 10 ---
UNITS
V V V V mA ---
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004
Specifications are subject to change without
REV. C
1/2
HF50-12F ERROR! REFERENCE SOURCE NOT FOUND.
COB GP C
VCB = 12.5 V VCE = 12.5 V POUT = 50 W(PEP) PIN = 5.0 W
f = 1.0 MHz f = 30 MHz 10 55
300
pF dB %
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004
Specifications are subject to change without
REV. C
2/2

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